Background
OTBv is a Dutch company with close ties to Universal Display Technologies Ltd. which is based in China. OTBv was a part of OTB Group and recently it was spun off in connection with the sale of the PCAP20 to UDT, but OTBv continues with its core mission which is to develop leading edge technologies in the field of OLED display manufacturing and processing equipment. OTBv is located in the cities of Eindhoven and Heerlen in the Netherlands.
OT Management and Strategic Direction
OTB Management Company
OTB Management Company oversees and supervises the operations and directions of OY on behalf of the owning shareholders. OTB Management Company is a US entity with significant experience in management and project management. The key principals involved include US and Chinese individuals include individuals with substantial experiences in corporate law, mergers and acquisitions, technology, OLED technology, management and project management experiences as well as Chinese OLED market, business law and international experiences. The entire international team at OTB Management Company is dedicated to the success of OT and in making OT a World leader in OLED technologies and in the development of leafing OLED manufacturing equipment and processes. The team includes the following individuals:
Mr. James Ng, Harvard BA and Harvard MBA
Mr. Chen Duo,
Dr. Miao Ruoyu
Mr. Kevin Ma,
Mr. Donald F. Sinex, JD and Harvard MBA
Mr. Jerry Hillman, Former Chairman, CDT and Harvard BA
Mr. Arokia Nathan, Ph.d and Professor Cambridge University, Special Advisor
Mr. James Sullivan, Ph.d MIT, Special Advisor
Mr. Reeza Chaji, Ph.d Waterloo University, Special Advisor
Mr. Paul Arsenault, Chairman Ignis Innovation, Inc., Special Advisor
Our Mission
The goal of OTBv is to provide the world’s most commercially productive and efficient approach to making organic light emitting diode displays, for television screens and for handheld mobile devices. The Company seeks and uses the best performing emissive materials. This includes polymer light emitting diode, smoled and phosphorescent materials, which are deposited in layers, using a number of processes, in the Company’s laboratories and test facilities. The Company helps design and customize the latest generation of substrates. This includes a particular focus on circuitry that permits the use of amorphous silicon backplanes. Using these materials and substrates, the Company develops single line manufacturing equipment to produce displays. It sells the materials, substrates, and equipment as an integrated ‘Total Approach.’
Intellectual Property
Please Fill out the Non-Disclosure Agreement below and a Representative will be in contact. Our Representative can supply you with information on our extensive line of Intellectual Property and Patents.
Publications
Kim,K.H., Nathan,A., Jang,J. (2008). Polycrystalline silicon with large disk-shaped grains by Ni-mediated crystallization of doped amorphous silicon. Journal of Non-Crystalline Solids 354, 2341-2344. ISSN: 0022-3093
Lee,H.-J., Sazonov,A., Nathan,A. (2008). Leakage current mechanisms in top-gate nanocrystalline silicon thin film transistors. Applied Physics Letters 92, . ISSN: 0003-6951
Li,F.M., Dhagat,P., Haverinen,H.M., McCulloch,I., Heeney,M., Jabbour,G.E., Nathan,A. (2008). Polymer thin film transistor without surface pretreatment on silicon nitride gate dielectric. Applied Physics Letters 93, . ISSN: 0003-6951
Vygranenko,Y., Wang,K., Vieira,M., Nathan,A. (2008). Indium oxide thin-film transistor by reactive ion beam assisted deposition. Physica Status Solidi (A): Applications and Materials 205(8), 1925-1928. ISSN: 1862-6300 [DOI link]
Ashtiani,S.J., Nathan,A. (2006). A driving scheme for active-matrix organic light-emitting diode displays based on feedback. IEEE/OSA Journal of Display Technology 2, 258-264. ISSN: 1551-319X
Chaji,G.R., Nathan,A. (2006). A stable voltage-programmed pixel circuit for a-Si:H AMOLED displays. IEEE/OSA Journal of Display Technology 2, 347-358. ISSN: 1551-319X
Chaji,G.R., Safavian,N., Nathan,A. (2006). Stable a-Si : H circuits based on short-term stress stability of amorphous silicon thin film transistors. Journal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films 24, 875-878. ISSN: 0734-2101
Chan,I., Fathololourni,S., Nathan,A., (2006). Nanoscale channel and small area amorphous silicon vertical thin film transistor. Journal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films 24, 869-874. ISSN: 0734-2101
Esmaeli-Rad,M.R., Sazonov,A., Nathan,A. (2006). High stability, low leakage nanocrystalline silicon bottom gate thin film transistor for AMOLED displays. Technical Digest, IEEE IEDM, , 303-306
Fathololourni,S., Chan,I., Moradi,M., Nathan,A. (2006). Numerical study of the scaling of a-Si:H thin film transistors. Journal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films 24, 888-891. ISSN: 0734-2101
Izadi,M.H., Karim,K.S., Nathan,A., Rowlands,J.A. (2006). Low-noise pixel architecture for advanced diagnostic medical x-ray imaging applications. Proc. Medical Imaging 2006: Physics of Medical Imaging SPIE,
Lai,J., Nathan,A., Rowlands,J.A. (2006). High dynamic range active pixel sensor arrays for digital x-ray imaging using a a-Si : H. Journal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films 24, 850-853. ISSN: 0734-2101
Lee,C.-H., Sazonov,A., Nathan,A. (2006). High hole and electron mobilities in nanocrystalline silicon thin-film transistors. Journal of Non-Crystalline Solids 352, 1732-1736. ISSN: 0022-3093
Lee,C.-H., Sazonov,A., Nathan,A. (2006). High performance n-channel 13.56 MHz plasma-enhanced chemical vapor deposition nanocrystalline silicon thin-film transistors. Journal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films 24, 618-623. ISSN: 0734-2101
Lee,C.-H., Sazonov,A., Nathan,A., Robertson,J. (2006). Directly deposited nanocrystalline silicon thin-film transistors with ultra high mobilities. Applied Physics Letters 89, . ISSN: 0003-6951
Lee,C.-H., Sazonov,A., Rad,M.R.E., Chaji,G.R., Nathan,A. (2006). Ambipolar thin-film transistors fabricated by PECVD nanocrystalline silicon. 2006 MRS Spring Meeting Symposium A, Wagner,S., Chu,V., Atwater Jr,H.A., Yamamoto,K., Zan,H.W. (ed.) MRS Symposium Proceedings series. , 910, 603-608
Lee,C.-H., Sazonov,A., Robertson,J., Nathan,A., Rad,M., Servati,P., Milne,W.I. (2006). How to achieve high mobility thin film transistors by direct deposition of silicon using 13.56 MHz RF PECVD? Technical Digest, IEEE, , 295-298
Li,F.M., Vygranenko,Y., Koul,S., Nathan,A. (2006). Photolithographically defined polythiophene organic thin-film transistors. Journal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films 24, 657-662. ISSN: 0734-2101
Nathan,A., Alexander,S., Huang,R., Striakhilev,D., Church,C., Aresenault,P., Ashtiani,S., Chaji,R. (2006). a-Si for AMOLED- meeting the performance and cost demands of display applications ( cell phone to HDTV) Technical Digest, Society for Information Display (SID) Symposium, San-Francisco, 37, 1543-1546
Nathan,A., Karim,K.S. (2006). Photon Detectors. in Korvink,J.G., Paul,O. (ed.) MEMS: A Practical Guide to Design, Analysis, and Applications. William Andrew Publishing USA and Springer-Verlag GmbH, 281-343
Nathan,A., Striakhilev,D., Chaji,S., Ashtiani,S., Lee,C.H., Sazonov,A., Robertson,J., Milne,W. (2006). Backplane requirements for active matrix organic light-emitting diode displays. 2006 MRS Spring Meeting Symposium A, Wagner,S., Chu,V., Atwater Jr,H.A., Yamamoto,K., Zan,H.W. (ed.) MRS Symposium Proceedings series. , 910
Ng,C., Nathan,A. (2006). Temperature characterization of a-Si : H thin-film transistor for analog circuit design using analog hardware description language modeling. Journal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films 24, 883-887. ISSN: 0734-2101
Ottaviani,T., Karim,K.S., Nathan,A., Rowlands,J.A. (2006). Low noise signal-to-noise ratio enhancing readout circuit for current-mediated active pixel sensors. Journal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films 24, 770-773. ISSN: 0734-2101
Rad,M.R.E., Lee,C.-H., Sazonov,A., Nathan,A. (2006). Nanocrystalline silicon films deposited by RF PECVD for bottom-gate thin-film transistors. 2006 MRS Spring Meeting Symposium A, Wagner,S., Chu,V., Atwater Jr,H.A., Yamamoto,K., Zan,H.W. (ed.) MRS Symposium Proceedings series. , 910, 627-632
Safavian,N., Chaji,G.R., Nathan,A., Rowlands,J.A. (2006). Three-TFT image sensor for real-time digital X-ray imaging. Electronics Letters 42, 150-151. ISSN: 0013-5194
Sakariya,K., Nathan,A. (2006). Leakage and charge injection optimization in a-Si AMOLED displays. IEEE/OSA Journal of Display Technology 2, 254-257. ISSN: 1551-319X
Sambandan,D., Striakhilev,D., Nathan,A. (2006). Device and circuit level optimization for high performance a-Si:H TFT-based OLED display. IEEE/OSA Journal of Display Technology 2, 52-59. ISSN: 1551-319X
Sambandan,S., Nathan,A. (2006). Equivalent circuit description of threshold voltage shift in a-Si:H TFT's from a probabilistic analysis of carrier population dynamics. IEEE Transactions on Electron Devices 53, 2306-2311. ISSN: 0018-9383
Sambandan,S., Nathan,A. (2006). Stable organic LED displays using RMS estimation of threshold voltage dispersion. IEEE Transactions on Circuits and Systems II: Express Briefs 53, 941-945
Sazonov,A., Meitine,M., Stryakhilev,D., Nathan,A. (2006). Low-temperature materials and thin-film transistors for electronics on flexible substrates. Semiconductors 40, 959-967
Servati,P., Nathan,A. (2006). Silicon on Mechanically Flexible Substrates for Large Area Applications. in kasap,S., Capper,P. (ed.) Handbook of Electronic and Optoelectronic Materials. Kluwer Academic Publishers, 1107-1119
Servati,P., Nathan,A., Amaratunga,G.A.J. (2006). Generalized transport-band field-effect mobility in disordered organic and inorganic semiconductors. Physical Review B 74(24), 245210. ISSN: 1098-0121 [DOI link]
Striakhilev,D., Nathan,A., Servati,P., Vygranenko,Y., Lee,C.-H., Sazonov,A. (2006). Amorphous silicon display backplanes on plastic substrates. IEEE/OSA Journal of Display Technology 2, 364-371. ISSN: 1551-319X
Vygranenko,Y., Louro,P., Viera,M., Chang,J.H., Nathan,A. (2006). Low leakage current a-Si : H/a-SiC : H n-i-p photodiode with Cr/a-SiNx front contact. Journal of Non-Crystalline Solids 352, 1837-1840. ISSN: 0022-3093
Vygranenko,Y., Wang,K., Nathan,A. (2006). Low leakage p-NiO/i-ZnO/n-ITO heterostructure ultraviolet sensor. Applied Physics Letters . ISSN: 0003-6951
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